Institut des
NanoSciences de Paris
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Deposition zone

© INSP - L. Becerra {JPEG}
  • High temperatures annealing furnace (Carbolite BGHA12/300A)
    This tool can heat samples up to a maximal temperature of 1200°C and for several hours if necessary. This oven can operate under air or oxygen atmosphere. It is used in particular to oxidize silicon wafers.
© INSP - L. Becerra {JPEG}
  • 2 evaporators by Joule effect (Edwards Auto 306 et Leybold Univex 300)
    These two thermal evaporators allow to deposit metallic thin films (Au, Al, Cr, Ti, Ag, …) on the surface of samples. A quartz balance can accurately calibrate the thickness of the deposited layers, varying from a few nanometers to a few hundred nanometers.
© INSP - L. Becerra {JPEG}
  • 2 pulvérisateurs multi-cibles cathodiques magnétron (Alcatel)
    One of these devices can contain up to 4 targets whereas the second contains 3. Possibility of heating the substrate and of cleaning it using a plasma. Depositions realized with plasmas of Argon and Oxygen. Big choice of available materials (Zn, Ti, W, Fe, Cu, Permalloy, SiO2, Mo). (Multi-) Layers of several microns thick can be realized.
© INSP - L. Becerra {JPEG}
  • Sputtering (Biorad SC500)
    Small sputtering working with a Argon plasma and allowing a quick metallization (Au) of samples (useful for example to observe an insulating sample with SEM).
© INSP - L. Becerra {JPEG}
  • Plasma cleaner (Harrick Plasma PDC-002)
    Machine working with oxygen or nitrogen gas, allowing to clean via a low energy plasma the surface of samples.