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Séminaire Hétérostructures 2D à base de dichalcogénures de metaux de transition (TMDC) : 3/3

Van der Waals epitaxy in transition metal diselenides and properties - Minh Tuan Dau - Mercredi 15 novembre 2017 à 11 h

INSP - UPMC - 4 place Jussieu - 75005 Paris - Barre 22-32, 2e étage, salle 201

Minh Tuan Dau, UMR8191 SPINTRONIQUE ET TECHNOLOGIE DES COMPOSANTS (SPINTEC), Grenoble

Abstract

Two-dimensional materials based on transition metal dichalcogenides (TMDs) have gained increasing attention because of their fascinating features in electronic and optical properties [1,2]. Achievement of layered TMDs with large lateral dimensions is a pre-requisite for an easy implementation into devices and for the exploration of novel physics. In this seminar, I will present the recent advances in the Molecular Beam Epitaxy growth of large-scale TMDs on different substrates. Structural, spectroscopic, electronic properties as well as electrical characterizations of these 2D layers will be discussed in the seminar.

[1] X. Duan, et al., Chem. Soc. Rev., 44, 8859-8876 (2015) [2] Y. Lui, et al., Nat. Rev. Mater. 1, 16042 (2016)